[Full Picture] A Simple Method to Extract Trapping Time Constants of GaN HEMTs | IEEE Conference Publication

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A Simple Method to Extract Trapping Time Constants of GaN HEMTs | IEEE Conference Publication | IEEE Xplore

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Article summary:

1. This paper presents a simple method to extract the time constants associated with trapping effects observed in GaN HEMT devices.

2. The proposed extraction method requires two sets of measurements: two-tone gain profiles with different ΔF, and small-signal gain for different VGS bias.

3. The proposed extraction methodology was validated experimentally using a 900 MHz class-B PA based on a CGH35015F GaN HEMT device, showing good agreement between the extracted and simulated results.

Article analysis:

The article is generally reliable and trustworthy, as it provides detailed information about the proposed extraction methodology for trapping time constants in GaN HEMTs, as well as an experimental validation of the method using a 900 MHz class-B PA based on a CGH35015F GaN HEMT device. The authors provide sufficient evidence to support their claims, such as theoretical background, equations, simulations, and experimental results.

However, there are some potential biases that should be noted. For example, the authors do not explore any counterarguments or alternative methods for extracting trapping time constants in GaN HEMTs that have been presented in previous works [2]–[4]. Additionally, the authors do not discuss any possible risks associated with their proposed method or its limitations. Furthermore, while the authors provide detailed information about their experimental setup and results, they do not provide any information about how they verified the accuracy of their measurements or if they took any steps to reduce measurement errors or uncertainties.

In conclusion, while this article is generally reliable and trustworthy due to its detailed information and evidence provided by the authors to support their claims, there are some potential biases that should be noted when evaluating its trustworthiness and reliability.

Topics for further research:

Alternative methods for extracting trapping time constants in GaN HEMTs Risks associated with proposed extraction methodology Limitations of proposed extraction methodology Verification of experimental measurements Reduction of measurement errors and uncertainties Previous works on trapping time constants in GaN HEMTs