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Article summary:
1. Gating technique is used to suppress surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetectors.
2. Dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω cm2 differential-resistance-area product at −100 mV.
3. 11μm 50% cut-off gated photodiode has a specific detectivity of 7 × 1011 Jones, and the detectivity stays above 2 × 1011 Jones from 0 to −500 mV operation bias.
Article analysis:
The article provides a detailed description of the use of gating technique to suppress surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetectors. The article also presents data on dark current densities and detectivity for the gated devices, which supports the claims made in the article. However, there is no discussion on potential risks associated with using this technology or any counterarguments that may be raised against it. Additionally, there is no mention of any other methods that could be used to reduce surface leakage or any comparison between these methods and the one presented in the article. Furthermore, there is no evidence provided for some of the claims made in the article such as “the saturated gated bias is reduced to −4.5 V” or “the detectivity stays above 2 × 1011 Jones from 0 to −500 mV operation bias” which makes it difficult to assess their accuracy and reliability. Therefore, while this article provides useful information about using gating technique to reduce surface leakage in type-II superlattice photodetectors, it does not provide enough evidence or explore all possible angles for its claims to be considered reliable and trustworthy.