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InAs/GaSb type-II superlattice infrared detectors: Future prospect: Applied Physics Reviews: Vol 4, No 3
Source: aip.scitation.org
Article summary:
1. Investigations of antimonide-based materials began in the 1950s and have been successful due to decades of III-V materials and device research.
2. InAs/GaSb type-II superlattices (T2SLs) were developed due to challenges with reproducibly fabricating high-operability HgCdTe focal plane arrays (FPAs) at reasonable cost, as well as theoretical predictions of lower Auger recombination for type T2SL detectors compared with HgCdTe.
3. III-V semiconductors are more robust than their II-VI counterparts, resulting in "ibility" advantages such as operability, spatial uniformity, temporal stability, scalability, producibility, and affordability.
Article analysis:
The article is generally reliable and trustworthy in its reporting of the development of InAs/GaSb type-II superlattices (T2SLs). It provides a comprehensive overview of the history of antimonide-based materials research and the motivations behind developing T2SLs. The article also provides an accurate description of the advantages that III-V semiconductors have over their II-VI counterparts.
However, there are some potential biases in the article that should be noted. For example, it does not provide any counterarguments or explore any potential risks associated with using T2SLs instead of HgCdTe FPAs. Additionally, it does not present both sides equally; instead it focuses primarily on the benefits of using T2SLs rather than exploring any potential drawbacks or disadvantages associated with them. Furthermore, there is no evidence provided to support some of the claims made in the article such as lower Auger recombination for type T2SL detectors compared with HgCdTe or that III-V semiconductors are more robust than their II-VI counterparts. Finally, there is a lack of exploration into other possible solutions or alternatives to using T2SLs for infrared detector structures which could be beneficial for readers looking for a more comprehensive overview on this topic.