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Adaptive Multi-Level Active Gate Drivers for SiC Power Devices | IEEE Journals & Magazine | IEEE Xplore
Source: ieeexplore.ieee.org
Article summary:
1. State-of-the-art silicon carbide (SiC) power devices provide superior performance over silicon devices with much higher switching frequencies/speed and lower losses.
2. A novel three-level (3-L) AGD for SiC power mosfet trajectory control is introduced, which has a shorter turn-off delay compared to any existing methodology.
3. A comprehensive datasheet-driven trajectory model for the online model-based optimization of the 3-L turn-off is introduced, and its benefits are illustrated through experiments.
Article analysis:
The article provides a comprehensive overview of the adaptive multi-level active gate drivers for SiC power devices, introducing a novel three-level (3-L) AGD for SiC power mosfet trajectory control that has a shorter turn-off delay compared to any existing methodology. The article also introduces a comprehensive datasheet-driven trajectory model for the online model-based optimization of the 3-L turn off, as well as providing design guidance and a case study.
The article appears to be reliable in terms of its content, as it provides detailed information about the proposed 3-L AGD and its advantages over existing methods, as well as providing an in depth analysis of the behavior of SiC power mosfets under multi level turn offs. The article also provides experimental results to validate its claims, which adds to its credibility.
However, there are some potential biases in the article that should be noted. For example, while the article does mention some existing methods such as those described in [14] and [15], it does not provide an exhaustive list or comparison between all existing methods and the proposed 3 L AGD method. Additionally, while the article does provide some experimental results to validate its claims, it does not provide enough evidence or data to fully support all of its claims or conclusions. Furthermore, while the article does provide design guidance and a case study at the end of the paper, it does not explore any potential risks associated with using this method or discuss any possible counterarguments that could be made against it.
In conclusion, while this article appears to be reliable in terms of its content and provides some evidence to support its claims, there are still some potential biases that should be noted when assessing its trustworthiness and reliability.