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Article summary:
1. This article discusses the suppression of 3C-inclusion formation during growth of 4H-SiC Si-face homoepitaxial layers with a 1° off-angle.
2. The authors propose that 3C-SiC nucleation triggers the formation of 3C inclusions, and suggest deep in situ etching and using a high C/Si ratio to suppress 3C-inclusion formation.
3. The techniques discussed in this article allow for the growth of epitaxial layers with 1° off-angles for a wide range of doping concentrations.
Article analysis:
This article is generally reliable and trustworthy, as it provides evidence to support its claims and presents both sides of the argument equally. The authors provide detailed information on their research methods, which allows readers to assess the validity of their findings. Furthermore, they cite relevant literature to back up their claims and provide an extensive list of references at the end of the article.
The only potential bias present in this article is that it focuses solely on 4H-SiC Si-face substrates with a 1° off-angle, which may limit its applicability to other types of substrates or off angles. Additionally, there is no discussion on possible risks associated with deep in situ etching or using a high C/Si ratio, which could be explored further in future research.