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Article summary:
1. This article examines the dispersion of drain current in a GaN HEMT, including gate and drain lag, using a new trapping model based on SRH theory.
2. The model is used to explain the bias- and terminal-potential dependency of the turn-on transients and their time constants.
3. Temperature as a function of time is shown to be a vital consideration in understanding the relationship between trap potentials and terminal potentials.
Article analysis:
This article provides an analysis of the dispersion of drain current in a GaN HEMT, including gate and drain lag, using a new trapping model based on SRH theory. The article is well written and provides detailed information about the model and its implications for understanding the relationship between trap potentials and terminal potentials.
The article does not provide any evidence or data to support its claims, which could be seen as a limitation. Additionally, there is no discussion of possible risks associated with this type of analysis or any counterarguments that could be made against it. Furthermore, there is no mention of any other models or theories that could be used to explain this phenomenon, which could lead to partiality in reporting.
In conclusion, this article provides an interesting analysis of dispersion in GaN HEMTs but lacks evidence to support its claims and fails to explore alternative models or theories that could be used to explain this phenomenon.