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Article summary:
1. This paper provides an analysis of the AM/AM and AM/PM nonlinear distortion generation mechanisms in Si LDMOS and GaN HEMT based RF power amplifiers.
2. Semi-analytical expressions are derived for the PA's AM/AM and the AM/PM distortions, which offer an accurate nonlinear distortion prediction across a wide range of operation classes and signal ranges.
3. The proposed technique relies on the true nonlinear models, but assumes that the necessary control voltages are already known, which requires a priori iterative numerical solution of the circuits' periodic steady-state regime.
Article analysis:
The article is written in a clear and concise manner, making it easy to understand for readers with some technical background in RF power amplifiers. The authors provide a comprehensive analysis of the AM/AM and AM/PM nonlinear distortion generation mechanisms arising in two common RF power amplifier technologies: Si LDMOS and GaN HEMT. They also present semi-analytical expressions for these distortions, which offer an accurate nonlinear distortion prediction across different operation classes and signal ranges.
The article is generally reliable as it provides detailed information about its topic, supported by evidence from previous works in this field. However, there are some potential biases that should be noted. For example, the authors focus mainly on two technologies (Si LDMOS and GaN HEMT), while other technologies may have different characteristics that could affect their performance differently than what is discussed in this article. Additionally, they rely on a priori iterative numerical solution of the circuits' periodic steady-state regime to obtain control voltages, which could lead to inaccurate results if not done correctly or if certain parameters are not taken into account properly.
In conclusion, this article provides a comprehensive analysis of AM/AM and AM/PM nonlinear distortion generation mechanisms in Si LDMOS and GaN HEMT based RF power amplifiers with semi-analytical expressions for their predictions across different operation classes and signal ranges. While generally reliable, potential biases should be noted when interpreting its results due to its reliance on certain assumptions about control voltages obtained from numerical simulations.