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Article summary:
1. The crater depth for laser ablation of single-crystal silicon increases dramatically at a laser intensity threshold of approximately 2×1010 W/cm2.
2. Thermal diffusion and subsequent explosive boiling after the completion of the laser pulse is a possible mechanism for the observed dramatic increase of the ablation depth.
3. Shielding of an expanding mass plasma during laser irradiation has a profound effect on this threshold phenomenon.
Article analysis:
The article is generally reliable and trustworthy, as it provides evidence to support its claims and presents both sides of the argument in an unbiased manner. The authors provide calculations based on their delayed phase explosion model which satisfactorily estimate the measurements, demonstrating that their proposed mechanism is likely to be correct. Furthermore, they note that shielding of an expanding mass plasma during laser irradiation has a profound effect on this threshold phenomenon, providing further evidence for their claims.
The article does not appear to have any major biases or one-sided reporting, as it presents both sides of the argument in an unbiased manner and provides evidence to support its claims. Additionally, there are no unsupported claims or missing points of consideration in the article, as all claims are supported by evidence and all relevant points are discussed in detail. There is also no promotional content or partiality present in the article, as it does not appear to be promoting any particular product or viewpoint over another. Finally, possible risks are noted throughout the article, ensuring that readers are aware of any potential dangers associated with high-power nanosecond laser ablation of silicon.