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Article summary:
1. This paper presents a novel approach to account for trapping effects in the large-signal description of GaN HEMTs.
2. The Chalmers (Angelov) model is employed and parameter extraction relies on pulsed S-parameter measurements.
3. It is shown that only three of the large-signal parameters are sensitive to trap states, which yields simple scaling rules and easy model implementation.
Article analysis:
The article provides a novel approach to account for trapping effects in the large-signal description of GaN HEMTs, using the Chalmers (Angelov) model and pulsed S-parameter measurements. The authors claim that only three of the large-signal parameters are sensitive to trap states, which yields simple scaling rules and easy model implementation.
The article is generally reliable and trustworthy, as it provides evidence for its claims through experiments and simulations. The authors provide detailed descriptions of their methodology, including the device under test, parameter extraction routine, subcircuit used to describe emission and capture process, etc., which makes it easier for readers to understand their approach. Furthermore, they also provide figures showing measured and simulated results for comparison purposes.
However, there are some points that could be improved upon in order to make the article more reliable and trustworthy. For example, while the authors do mention possible risks associated with their approach (e.g., over-estimation of output power at higher Vds conditions), they do not provide any further details or explore counterarguments regarding these risks. Additionally, while they do mention other approaches to modeling trapping effects in transistor models (e.g., introducing a subcircuit that dynamically determines the effective internal gate voltage), they do not compare their approach with these other approaches or discuss why their approach may be preferable in certain cases. Finally, while they do provide evidence for their claims through experiments and simulations, it would be beneficial if they provided more detail regarding these experiments/simulations (e.g., what parameters were varied/measured).
In conclusion, this article provides a novel approach to account for trapping effects in GaN HEMTs using the Chalmers (Angelov) model and pulsed S-parameter measurements; however there are some areas where additional information or exploration could improve its trustworthiness and reliability even further.