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Article summary:
1. The mechanisms of laser ablation in silicon are investigated close to the threshold energy for pulse durations of 500 fs and 50 ps.
2. Under femtosecond laser irradiation, isochoric heating and rapid adiabatic expansion of the material provide a natural pathway to phase explosion.
3. For longer (ps to ns) pulses, fragmentation of the hot metallic fluid is the only relevant ablation mechanism.
Article analysis:
The article provides a detailed description of the mechanisms of laser ablation in silicon for pulse durations of 500 fs and 50 ps. The authors use a unique model coupling carrier and atom dynamics within a unified Monte Carlo and molecular-dynamics scheme to investigate this phenomenon. The article presents evidence that under femtosecond laser irradiation, isochoric heating and rapid adiabatic expansion of the material provide a natural pathway to phase explosion, while for longer (ps to ns) pulses, fragmentation of the hot metallic fluid is the only relevant ablation mechanism.
The article appears to be reliable as it provides evidence from experiments conducted by the authors using their unique model coupling carrier and atom dynamics within a unified Monte Carlo and molecular-dynamics scheme. Furthermore, it cites other sources such as Refs [1], [2], [3], [4]–[7], [8], [9], [10] and [11] which further support its claims. However, there are some potential biases in the article that should be noted. For example, it does not explore any counterarguments or present both sides equally when discussing its findings on laser ablation in silicon for different pulse durations. Additionally, it does not mention any possible risks associated with this process or provide any information on how these risks can be mitigated or avoided altogether.