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Article summary:
1. This study investigates the recovery time of AlGaN/GaN HEMT based low noise amplifiers (LNA) after an input overdrive pulse.
2. It was found that the LNAs from two commercial processes experienced a severe drop in gain after input overdrive pulses higher than 28 dBm, recovering over a duration of around 20 ms.
3. In contrast, the LNA fabricated in-house at Chalmers experienced no visible effects up to an input power of 33 dBm, suggesting that electron trapping in the buffer plays an important role in recovery time.
Article analysis:
The article is generally reliable and trustworthy as it provides evidence for its claims through experiments and measurements conducted on three different GaN-MMIC processes. The authors also provide detailed information about the setup used for characterization and the parameters tested, such as bias current, pulse length, etc., which adds to the credibility of their findings. Furthermore, they provide references to previous studies related to their research topic which further strengthens their argument.
However, there are some potential biases present in the article which should be noted. Firstly, only three GaN-MMIC processes were tested which may not be representative of all GaN-MMIC processes available on the market. Secondly, only one parameter (pulse length) was tested for its effect on recovery time which may not be sufficient to draw definitive conclusions about all possible factors affecting recovery time. Lastly, there is no discussion about possible risks associated with using GaN LNAs such as increased power consumption or heat dissipation due to high drain currents during operation which could have been explored further by the authors.