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Surface multiferroics in silicon enabled by hole-carrier doping - ScienceDirect
Source: sciencedirect.com
Article summary:
1. First-principles calculations predict a coexistence of magnetic and electric orders on clean Si(0 0 1) surfaces.
2. Hole-carrier doping can lead to ferromagnetic surfaces, with polarized spins concentrated in an atom-thick space near the surface due to exchange splitting of localized s-like surface states on surface Si dimers.
3. The coupling between magnetic and electric orders can be further enhanced by strain silicon technology, making the Si surfaces multiferroic materials.
Article analysis:
The article is generally reliable and trustworthy, as it is based on first-principles calculations and provides evidence for its claims. The authors provide detailed information about their methods and results, which are supported by references to other research papers. Furthermore, the authors acknowledge potential conflicts of interest and provide acknowledgements for contributions from other authors.
However, there are some points that could be improved upon in terms of trustworthiness and reliability. For example, the article does not explore any counterarguments or present both sides equally; instead it focuses solely on the potential benefits of hole-carrier doping for creating multiferroic materials in silicon surfaces. Additionally, there is no discussion of possible risks associated with this process or any other potential drawbacks that should be considered before implementing it in practice. Finally, there is a lack of detail regarding the authors' backgrounds; while they are acknowledged at the end of the article, more information about their qualifications would help to increase trustworthiness and reliability.