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Mid-/long-wave dual-band infrared focal plane array based on type-II InAs/GaSb superlattice
Source: spiedigitallibrary.org
Article summary:
1. A mid-/long-wave dual-band detector with N-M-π-B-π-N sturcture was developed based on type-II InAs/GaSb superlattice.
2. The two channels, with respective 50% cut-off wavelength at 3.5 μm and 11.8 μm were obtained, with peak quantum efficiency (QE) of 22% at 2.7 μm under no bias voltage and 23% at 9.1 μm under -180 mV, respectively.
3. Thermal images of both channel were taken by the fabricated FPA.
Article analysis:
This article is generally reliable and trustworthy as it provides detailed information about the development of a mid-/long wave dual band detector based on type II InAs/GaSb superlattice, including its structure, performance characteristics such as peak quantum efficiency (QE), resistance under 0 and -180 mV of applied bias, and specific detectivity of LWIR band from 4.5 μm to 12.6 μm under - 180 mV at 77K, as well as thermal images taken by the fabricated FPA. The article also cites relevant sources for further reading and provides access to the full article for purchase or subscription to the digital library for members or nonmembers respectively.
The only potential bias in this article is that it does not provide any counterarguments or explore any possible risks associated with the development of this dual band detector technology; however, this is likely due to the fact that this is a research paper rather than an opinion piece or news article which would typically include such considerations. Additionally, there are no promotional content or partiality present in this article as it simply presents factual information about the development of this technology without any subjective commentary or judgemental language used throughout its text.