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Defects inducing anomalous exciton kinetics in monolayer WS2 | SpringerLink
Source: link.springer.com
Article summary:
1. Defects in monolayer WS2 can induce anomalous exciton kinetics.
2. Defect engineering of two-dimensional transition metal dichalcogenides is discussed, as well as the impact of point defects and dopant diffusion on silicon.
3. Optical identification of sulfur vacancies and hopping transport through defect-induced localized states are also explored.
Article analysis:
The article is generally reliable and trustworthy, providing evidence for its claims with references to relevant research studies. The article does not appear to be biased or one-sided, presenting both sides of the argument equally and exploring counterarguments where appropriate. There is no promotional content or partiality present in the article, and potential risks are noted throughout. All claims made are supported by evidence from relevant research studies, and all points of consideration are explored thoroughly.