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Article summary:
1. Oxygen can act as an effective p-type dopant in lead selenide (PbSe) thin films, allowing for the fabrication of PbSe photodiodes.
2. The detectivity of the fabricated photodiodes was determined to be 1.2 × 1011 cm Hz1/2/W at forward bias, reverse bias and zero bias respectively.
3. O2-plasma treatment was used to implant oxygen atoms into PbSe lattice, providing an easily controllable process to fabricate PbSe-based photovoltaic devices.
Article analysis:
The article is generally reliable and trustworthy, as it provides a detailed description of the research conducted on the fabrication of lead selenide (PbSe) thin film photodiode for near-infrared detection via O2-plasma treatment. The article is well written and provides clear evidence for its claims, such as the detectivity being determined as 1.2 × 1011 cm Hz1/2/W at forward bias, reverse bias and zero bias respectively. Furthermore, the article also provides a comprehensive overview of previous research conducted on PbSe optoelectronic devices and their drawbacks, which helps to provide context for this research.
However, there are some potential biases that should be noted in this article. For example, while the article does mention previous research conducted on PbSe optoelectronic devices and their drawbacks, it does not explore any potential counterarguments or alternative solutions that have been proposed by other researchers in this field. Additionally, while the article does provide evidence for its claims regarding the performance of the fabricated photodiodes, it does not provide any evidence regarding possible risks associated with using O2-plasma treatment to implant oxygen atoms into PbSe lattice or any other potential negative impacts that may arise from this method of fabrication.
In conclusion, while this article is generally reliable and trustworthy due to its clear evidence for its claims and comprehensive overview of previous research conducted on PbSe optoelectronic devices and their drawbacks, there are some potential biases that should be noted when reading this article such as lack of exploration of counterarguments or alternative solutions proposed by other researchers in this field and lack of evidence regarding possible risks associated with using O2-plasma treatment to implant oxygen atoms into PbSe lattice or any other potential negative impacts that may arise from this method of fabrication.