1. A new light harvesting technique has been developed to improve the absorption coefficient and reduce reflection loss in InAs/GaAsSb type-II superlattices long wavelength infrared photodetectors.
2. High quantum efficiencies (QEs) were observed in a set of InAs/GaAsSb superlattice LWIR photodetectors with different absorption layer thicknesses.
3. By adjusting the doping concentration of the buffer layer, a LWIR detector with high QE of more than 60% was achieved without any antireflection coating.
The article is generally reliable and trustworthy, as it provides evidence for its claims and presents both sides of the argument equally. The authors provide detailed information on their research methods and results, as well as citing relevant sources to support their findings. Furthermore, they acknowledge potential risks associated with their work and provide suggestions for further research.
However, there are some areas where the article could be improved upon. For example, while the authors discuss potential biases in their work, they do not explore counterarguments or present alternative points of view on the issue at hand. Additionally, there is no discussion of possible limitations or drawbacks associated with their proposed solution or any other potential solutions that may exist. Finally, while the authors cite relevant sources to support their findings, they do not provide any evidence for their claims regarding the effectiveness of light harvesting techniques in improving absorption coefficients and reducing reflection losses in InAs/GaAsSb type-II superlattices long wavelength infrared photodetectors.