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Article summary:
1. A high performance bias-selectable mid-/long-wavelength infrared photodetector based on InAs/InAs1−xSbx type-II superlattices on GaSb substrate has been demonstrated.
2. The mid-wavelength channel exhibited a quantum efficiency of 45% at 100 mV bias voltage under front-side illumination and without any anti-reflection coating.
3. The long-wavelength channel exhibited a quantum efficiency of 40%, a dark current density of 5.7 × 10−4 A/cm2 under −150 mV applied bias at 77 K, providing a specific detectivity value of 1.64 × 1011 cm·Hz/W.
Article analysis:
The article is generally reliable and trustworthy, as it provides detailed information about the performance of the photodetector and its potential applications in various fields such as security, surveillance, and medical imaging. The article does not appear to be biased or one-sided in its reporting, as it presents both the advantages and disadvantages of the device in an objective manner. Furthermore, the article provides evidence for its claims by citing relevant research studies and experiments conducted to test the device's performance. Additionally, there are no missing points of consideration or unexplored counterarguments that could potentially weaken the reliability of the article's claims. Finally, there is no promotional content present in the article that could lead to partiality or misrepresentation of facts.