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Article summary:
1. Silicon carbide (SiC) MOSFETs are viable alternatives for silicon (Si) insulated-gate bipolar transistors (IGBTs), but retrofitting them into legacy converters is difficult due to the presence of a higher amount of parasitic inductance.
2. An active gate driver (AGD) can meet the conflicting requirements of faster switching speed and lower overshoot and ringing.
3. This article presents a switched current source-based AGD that is designed and tested in a 50-kVA voltage source inverter made with SiC MOSFET power modules, with the control methodology discussed and experimental results presented.
Article analysis:
The article “Digitally Controlled Gate Current Source-Based Active Gate Driver for Silicon Carbide MOSFETs” provides an overview of the challenges associated with retrofitting SiC MOSFETs into legacy converters, as well as an introduction to active gate driving techniques for SiC MOSFETs. The article then goes on to present a switched current source-based AGD that is designed and tested in a 50-kVA voltage source inverter made with SiC MOSFET power modules, with the control methodology discussed and experimental results presented.
The article is generally reliable, providing detailed information on the challenges associated with retrofitting SiC MOSFETs into legacy converters, as well as an introduction to active gate driving techniques for SiC MOSFETs. The article also provides detailed information on the design of current sources that control the charging of MOS capacitance Cgs, as well as an extensive discussion on the mathematical modeling of the switching transient which forms the basis of the control strategy presented in this article. Furthermore, it provides detailed information on how variations in device parameters due to temperature and manufacturing processes can affect gate driver performance, as well as how these issues can be addressed by using a current source-driven AGD instead of a resistor-driven one.
The only potential bias or missing point of consideration in this article is that it does not provide any discussion or analysis on possible risks associated with using this type of AGD technology, such as safety risks or environmental risks. However, overall this article is reliable and trustworthy, providing detailed information on both active gate driving techniques for SiC MOSFETs and how variations in device parameters due to temperature and manufacturing processes can be addressed by using a current