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An isomorphic valency transition in SmTe film enabling nonvolatile resistive change | Research Square
Source: researchsquare.com
Article summary:
1. A NaCl-type SmTe film showed a significant electrical contrast between as-deposited and annealed films without a transition in the crystal structure.
2. A valency transition between Sm2+ and Sm3+ was found to cause a significant change in the electronic structure and resistivity.
3. A SmTe-based memory device was demonstrated with switching driven by electrical pulse-induced Joule heating, offering improved readout reliability and data retention for 10 years at 262 °C.
Article analysis:
The article is generally reliable, providing evidence for its claims through experiments and measurements. The authors have provided sufficient detail about their research methods, results, and conclusions, allowing readers to evaluate the trustworthiness of the article. However, there are some potential biases that should be noted. For example, the authors do not discuss any possible risks associated with using this material or any potential drawbacks of using it compared to other materials. Additionally, they do not explore any counterarguments or present both sides of the argument equally; instead they focus solely on promoting their own findings. Furthermore, some of the claims made in the article are unsupported by evidence or missing points of consideration which could weaken their argument. All in all, while this article is generally reliable, readers should be aware of these potential biases when evaluating its trustworthiness and reliability.