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Article summary:
1. La doping of n-type polycrystalline InSb improves its thermoelectric performance by inducing deep level impurity donor state and massive defects.
2. The peak power factor of La-doped InSb is enhanced from 42 to 58 μW cm−1 K−2 at 773 K due to the enlarged carrier concentration provided by the deep level donor state.
3. The peak zT of La-doped InSb is promoted to 0.85 at 773 K, which is among the best value in III-V compounds.
Article analysis:
This article appears to be reliable and trustworthy as it provides a detailed description of the research conducted and its results, as well as citing relevant sources for further information. The authors have also provided data availability information, indicating that they are willing to share their data upon request. Furthermore, there does not appear to be any promotional content or partiality in the article, nor any unsupported claims or missing points of consideration. However, it should be noted that the article does not present both sides equally; while it discusses the potential benefits of La doping on InSb's thermoelectric performance, it does not explore any potential risks associated with this process. Additionally, there is no mention of possible counterarguments or alternative approaches that could be taken instead of La doping in order to improve InSb's thermoelectric performance.