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Article summary:
1. This article presents a monolithic solution to highly linear on-chip temperature sensing in GaN power integrated circuits.
2. The temperature sensor consists of a voltage reference and a logic inverter, both of which are built from enhancement-mode (E-mode) and depletion-mode (D-mode) metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs).
3. By configuring the active-load D-mode transistor as a two-dimensional electron gas (2DEG) resistor in the logic inverter, the temperature sensing solution is improved further, showing stable sensing output, higher sensitivity, better linearity and smaller error.
Article analysis:
This article provides an overview of a monolithic solution to highly linear on-chip temperature sensing in GaN power integrated circuits. The article is well written and provides detailed information about the design of the temperature sensor and its performance characteristics. The authors provide evidence for their claims by citing relevant research papers and providing experimental results from their own work.
The article does not appear to be biased or one sided as it presents both sides of the argument equally. It also does not contain any promotional content or partiality towards any particular technology or product. Furthermore, it does not appear to be missing any points of consideration or evidence for its claims as all relevant information is provided in detail.
The only potential issue with this article is that it does not explore any counterarguments or possible risks associated with using this technology for on chip temperature sensing. However, this could be due to the fact that there are no known risks associated with this technology at present so it may not have been necessary to include them in the article.