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Article summary:
1. Emerging intelligence applications, such as AIoT, robotics, and edge computing, are limited by the increasing disparity between the performance of physically separated logic and memory blocks on a conventional von Neumann architecture.
2. Nonvolatile memory (NVM) technologies have been proposed to address this issue by blurring the boundary between memory and logic units for in-memory computing.
3. 2D-semiconductor-based ferroelectric field-effect transistors (2D FeFETs) have emerged as an appealing candidate for nonvolatile logic gates and artificial synapses/neurons due to their advantageous features such as aggressive thickness scaling, enhanced electrostatic control, and reconfigurable ambipolarity.
Article analysis:
The article is generally reliable and trustworthy in its reporting of the potential of 2D FeFETs for in-memory computing applications. It provides a comprehensive overview of the current state of research into this technology, including its advantages over traditional CMOS implementations and its potential applications in AIoT, robotics, and edge computing. The article also provides evidence to support its claims through references to relevant studies that have been conducted on this topic.
The article does not appear to be biased or one-sided in its reporting; it presents both sides of the argument fairly and objectively. It does not make any unsupported claims or omit any points of consideration; instead it provides a thorough overview of the current state of research into 2D FeFETs for in-memory computing applications. Furthermore, it does not contain any promotional content or partiality towards any particular technology or approach; instead it presents an unbiased view of the potential benefits and drawbacks associated with using 2D FeFETs for in-memory computing applications. Finally, possible risks associated with using this technology are noted throughout the article; however these risks are discussed from a theoretical perspective rather than from an empirical one.