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Article summary:
1. This article investigates the effect of trench process variation (TPV) on recessed-gate junctionless MOSFETs (JLMs) and their inverter circuits.
2. Numerical simulations show that TPV causes fluctuations in analog parameters such as propagation delay and static noise margin, as well as subthreshold swing and threshold voltage of JLMs.
3. The physics behind TPV is analyzed from a device level, and a processing guideline is offered to ensure a reasonable SS value of the device.
Article analysis:
The article “Investigation of trench process variation on the recessed-gate junctionless MOSFETs considering the circuit application” provides an in-depth analysis of the effects of trench process variation (TPV) on recessed-gate junctionless MOSFETs (JLMs). The authors use numerical simulations to demonstrate how TPV can cause fluctuations in analog parameters such as propagation delay and static noise margin, as well as subthreshold swing and threshold voltage of JLMs. They also provide insights into the physics behind TPV from a device level, and offer a processing guideline to ensure a reasonable SS value for the device.
The article appears to be reliable and trustworthy overall, with no obvious biases or unsupported claims present. All points are supported by evidence from numerical simulations, and all potential risks are noted. The authors also provide an exploration into counterarguments by analyzing the physics behind TPV from a device level, which helps to further strengthen their argument. Furthermore, there is no promotional content present in the article, nor does it appear to be partial or one-sided in any way; both sides are presented equally throughout.
In conclusion, this article appears to be reliable and trustworthy overall; however, it should be noted that more research may need to be done in order to fully understand the implications of TPV on JLMs before any definitive conclusions can be drawn.