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Article summary:
1. This article discusses the thermoelectric performance of n-type polycrystalline InSb, which is improved by La doping.
2. The peak power factor of La-doped InSb is enhanced from 42 to 58 μW cm−1 K−2 at 773 K due to the enlarged carrier concentration provided by the deep level donor state.
3. The peak zT of La-doped InSb is promoted to 0.85 at 773 K, which is among the best value in III-V compounds.
Article analysis:
This article provides a detailed overview of the thermoelectric performance of n-type polycrystalline InSb, which is improved by La doping. The authors provide evidence for their claims through physical characterization and transport property measurements, theoretical calculations, and XRD Rietveld refinement analysis. The results are presented in a clear and concise manner, making it easy to understand the findings of this study.
The article does not mention any potential risks associated with La doping or any other possible drawbacks that could arise from this process. Additionally, there is no discussion on possible counterarguments or alternative approaches that could be taken to improve the thermoelectric performance of InSb without using La doping. Furthermore, there is no mention of any promotional content or partiality in the article, suggesting that it presents both sides equally and fairly.
In conclusion, this article provides a comprehensive overview of how La doping can be used to improve the thermoelectric performance of n-type polycrystalline InSb. However, more information should be provided regarding potential risks associated with this process as well as alternative approaches that could be taken to achieve similar results without using La doping.