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Article summary:

1. Molecular dynamics (MD) simulation was used to investigate the deformation and crack formation of monocrystalline 4H-SiC in single grit grinding.

2. Slip bands extension in the later stage of plastic deformation leads to crack initiation, which is driven by tensile stresses parallel to the scratch direction and perpendicular to the scratch plane.

3. The propagation of the two cracks is driven by the maximum principal stress at the crack tip, and its direction depends on the direction of this stress.

Article analysis:

This article provides a detailed analysis of the deformation and crack formation of monocrystalline 4H-SiC involved in single grit grinding using molecular dynamics (MD) simulation. The authors provide a comprehensive overview of previous experimental studies on this topic, as well as their own MD simulation results. The article is well-structured and easy to follow, with clear explanations for each step taken in their research process.

The authors present their findings objectively, without any bias or promotional content. They also provide evidence for their claims, such as stress analysis demonstrating that tensile stresses are responsible for crack initiation ahead of a diamond abrasive grit, and that the maximum principal stress at the crack tip drives its propagation. Furthermore, they note possible risks associated with their findings, such as potential damage to SiC wafers during grinding processes due to slip band extension leading to crack initiation.

The only potential issue with this article is that it does not explore counterarguments or present both sides equally; however, given that it is focused on presenting new findings from an MD simulation study rather than debating existing theories or opinions on this topic, this is understandable and does not detract from its overall trustworthiness or reliability.