1. A pulsed measurement of AlGaN/GaN high electron mobility transistors (HEMTs) current-voltage (I-V) output characteristics from 100 to 300 K temperatures has been systematically investigated, and a significant kink is clearly observed.
2. The kink effect is more significant in the pulsed mode evaluation, which indicates a time constant related mechanism involved in the carrier transport.
3. A weak impact ionization by monitoring the gate current in the on-state of device has also been observed, and it is more significant at cryogenic temperatures.
The article “Transient pulsed analysis on GaN HEMTs at cryogenic temperatures” provides an overview of the effects of temperature on GaN HEMTs when subjected to pulsed measurements. The article is well written and provides a comprehensive overview of the topic, however there are some potential biases that should be noted.
First, the article does not provide any evidence for its claims regarding the correlation between kink effects and impact ionization or any other mechanisms that may be involved in carrier transport. Additionally, while it does mention possible risks associated with cryogenic temperatures, it does not provide any detailed information about these risks or how they can be mitigated. Furthermore, while it does discuss both dc and pulsed measurements, it does not present both sides equally as it focuses primarily on pulsed measurements rather than dc measurements.
In addition, there is no discussion of counterarguments or alternative explanations for the observed phenomena which could lead to a one-sided reporting of results. Finally, there is no mention of promotional content which could indicate partiality towards certain products or services related to this research topic.
In conclusion, while this article provides an informative overview of transient pulsed analysis on GaN HEMTs at cryogenic temperatures, there are some potential biases that should be noted such as lack of evidence for claims made and one-sided reporting without exploring counterarguments or alternative explanations for observed phenomena.