[Full Picture] RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates | IEEE Journals & Magazine

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RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates | IEEE Journals & Magazine | IEEE Xplore

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Article summary:

1. Enhancement-mode (E-mode) submicron 0.45-μm p-GaN gate HEMTs on 200-mm high-resistivity-Si (HRS) substrates have been demonstrated with high uniformity and high overall combined performance for RF applications.

2. The device exhibits a positive threshold voltage (VTH) of +0.58 V at ID of 0.1 mA/mm, a peak transconductance (GM) of 150 mS/mm, high saturation current density of 630 mA/mm at a gate bias (VGS) of 6 V and >1 A/mm at a VGS of 11 V.

3. At 5 GHz, large-signal load-pull measurement yields an output power density of 1.4 W/mm and a power added efficiency up to 55.4 % with a drain voltage less than 20 V.

Article analysis:

The article is generally reliable and trustworthy as it provides detailed information about the development and performance of RF enhancement-mode p-GaN gate HEMTs on 200 mm-Si substrates for radio frequency applications. The article is well written and provides clear evidence for the claims made in the form of figures, tables, and references to other works in the field. The article also presents both sides equally by providing comparison between this work and previously reported E-mode gate-all-around p–GaN MIS HEMT in Table 1.

However, there are some potential biases that should be noted when reading this article such as one sided reporting as only positive aspects are discussed without any mention of possible risks or drawbacks associated with the technology presented in the article; missing points of consideration such as environmental impacts or cost implications; missing evidence for some claims made; unexplored counterarguments; promotional content; partiality towards certain technologies over others; etc.

In conclusion, while this article is generally reliable and trustworthy, readers should be aware that there may be potential biases present which could affect their interpretation of the information presented in the article.

Topics for further research:

Environmental impacts of RF enhancement-mode p-GaN gate HEMTs Cost implications of RF enhancement-mode p-GaN gate HEMTs Advantages and disadvantages of RF enhancement-mode p-GaN gate HEMTs Comparison between RF enhancement-mode p-GaN gate HEMTs and E-mode gate-all-around p–GaN MIS HEMT Potential risks associated with RF enhancement-mode p-GaN gate HEMTs Promotional content related to RF enhancement-mode p-GaN gate HEMTs