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Article summary:
1. High voltage SiC power MOSFETs are a suitable replacement for conventional SiIGBTs in power conversion systems due to its high speed switching capability.
2. Switching surge voltage is induced by the high speed switching operation of SiC MOSFETs, which can be suppressed by active gate drive techniques.
3. This paper proposes a digital active gate driver as an advanced active gate drive for SiC MOSFETs to suppress the switching surge voltage, which is compared to the conventional snubber capacitor.
Article analysis:
The article is generally reliable and trustworthy, as it provides evidence for its claims and presents both sides of the argument equally. The authors provide detailed information on the proposed digital active gate driver and its control method, as well as comparisons with the conventional snubber capacitor. The article also includes references to other research papers that support their claims.
However, there are some potential biases in the article that should be noted. For example, the authors do not explore any counterarguments or alternative solutions to suppressing switching surge voltage in SiC MOSFETs. Additionally, there is no discussion of possible risks associated with using digital active gate drivers for this purpose. Furthermore, while the authors provide evidence for their claims, they do not present any data or experiments that would further support their conclusions about the effectiveness of their proposed solution.
Topics for further research:
Alternative solutions for suppressing switching surge voltage in SiC MOSFETs
Risks associated with digital active gate drivers
Experimental data for digital active gate driver control methods
Comparisons between digital active gate drivers and snubber capacitors
Advantages of digital active gate drivers over snubber capacitors
Applications of digital active gate drivers in power electronics