1. A modified pBp design has been demonstrated for dual-band infrared photodetectors.
2. The modified pBp structure consists of a p-type InAs/GaSb superlattice for long-wavelength (LW) detection and a p-type InAs/GaSb/AlSb based superlattice for mid-wavelength (MW) detection, separated by a hole barrier consisting of an InAs/AlSb superlattice.
3. By using the modified MW absorber, the 100 % cutoff wavelength was blue-shifted from 8 μm to 7 μm while maintaining the same 50 % cutoff wavelength of around 6.4 μm.
The article is generally reliable and trustworthy as it provides evidence to support its claims, such as the demonstration of a modified pBp design for dual-band infrared photodetectors, and the use of an InAs/GaSb/AlSb based superlattice as an MW absorber which resulted in a blue shift in the 100% cutoff wavelength from 8μm to 7μm while maintaining the same 50% cutoff wavelength of around 6.4μm. The article also provides detailed descriptions of the experimental setup used and results obtained, which further adds to its credibility.
However, there are some potential biases that should be noted when assessing this article’s trustworthiness and reliability. For example, there is no discussion or exploration of any possible risks associated with using this modified pBp design or any counterarguments that could be made against it. Additionally, there is no mention of any other research or studies that have been conducted on similar topics which could provide additional context or insight into this particular study’s findings. Finally, there is also no mention of any potential limitations or drawbacks associated with this design which could be important considerations when assessing its overall effectiveness and usefulness in real world applications.