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Article summary:

1. GaN HEMTs are known for their distinct nonlinear behavior compared to other PA technologies such as Si LDMOS and GaAs MESFETs.

2. This paper investigates the origin of this nonlinear behavior, demonstrating that it is due to a low-frequency dispersion caused by charge trapping-related phenomena.

3. The paper also shows that this soft-compression phenomenon can be observed in static CW tests, but turns into gain expansion when measured with dynamic tests using real communication signals.

Article analysis:

The article is generally reliable and trustworthy, providing a comprehensive overview of the origins of GaN HEMT nonlinear behavior and its implications for PA design. The authors provide evidence from recent research results to support their claims, as well as simulations and measurements conducted with a vector signal generator/analyzer laboratory test bench.

However, there are some potential biases in the article that should be noted. For example, the authors focus primarily on GaN HEMTs and do not explore counterarguments or alternative explanations for the observed nonlinear behavior of other PA technologies such as Si LDMOS or GaAs MESFETs. Additionally, the authors do not discuss any possible risks associated with using GaN HEMTs in PA design, which could lead readers to believe that they are completely safe to use without considering any potential drawbacks or limitations.

In addition, the article does not present both sides equally; instead it focuses mainly on the advantages of using GaN HEMTs in PA design without exploring any potential disadvantages or challenges associated with them. Furthermore, there is no mention of promotional content in the article which could lead readers to believe that it is unbiased and objective when it may not be so.

In conclusion, while this article provides an informative overview of GaN HEMT nonlinear behavior and its implications for PA design, there are some potential biases that should be taken into consideration when evaluating its trustworthiness and reliability.