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1. Surrounding gate MOSFET is a promising device structure for future technology nodes due to its enhanced gate control capability, resulting in greater short channel effect immunity and leakage current reduction.

2. Depending on the applied gate voltage, the surrounding gate MOSFET can work at different modes from heavy accumulation to strong inversion regions, and the polysilicon depletion effect cannot be neglected in nanoscale MOSFETs.

3. An analytical surface potential model and a potential-based drain current model are derived to take into account the polysilicon depletion effect and verified using 3D device simulator SenTaurus Device.

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