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Article summary:

1. Recent advances in 2D materials have enabled the fabrication of atomically thin electronics and optoelectronics.

2. A two-step CVD method has been developed to grow WSe2/MoSe2 heterostructures, with spatial and size control of the heterostructures up to 169 μm.

3. Raman and photoluminescence spectroscopy were used to characterize the electronic coupling effect between MoSe2 and WSe2, while atomic resolution scanning transmission electron microscopy imaging revealed that WSe2 can form atomically seamless connections to MoSe2 edges at lateral junctions.

Article analysis:

The article is generally reliable and trustworthy, as it provides a detailed description of the two-step CVD method for growing WSe2/MoSe2 heterostructures, along with evidence from Raman and photoluminescence spectroscopy as well as atomic resolution scanning transmission electron microscopy imaging. The article also presents potential applications of these heterostructures in electronics and optoelectronics, such as solid state laser devices at room temperature, high speed transistors, etc., which are supported by references from previous studies.

However, there are some potential biases in the article that should be noted. For example, the article does not explore any possible risks associated with this two-step CVD method or its applications in electronics and optoelectronics. Additionally, there is no discussion of any unexplored counterarguments or alternative methods for constructing 2D heterostructures that could potentially be more effective than this two-step CVD method. Furthermore, there is a lack of evidence for some of the claims made in the article regarding the advantages of this two-step CVD method over one-step methods (e.g., cross-contamination avoidance). Finally, there is a lack of discussion on how this two-step CVD method could be improved upon or further developed in order to make it more effective or efficient.