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200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs | IEEE Conference Publication | IEEE Xplore
Source: ieeexplore.ieee.org
Article summary:
1. This paper presents a 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developed on 200 mm substrates.
2. The platform includes depletion-mode (d-mode) MIS-HEMTs and Gated-Edge-Termination Schottky barrier diodes (GET-SBDs) for monolithic GaN integration for power ICs.
3. The platform also includes low-voltage analog/logic devices and passive components to support the GaN ICs platform, allowing for better control over gate signals and lower ringing at higher frequencies.
Article analysis:
This article is a reliable source of information about the development of a 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developed on 200 mm substrates. The article provides detailed information about the components of the platform, including depletion-mode (d-mode) MIS-HEMTs and Gated-Edge-Termination Schottky barrier diodes (GET-SBDs), as well as low voltage analog/logic devices and passive components that support the GaN ICs platform. The article also explains how this platform can help improve efficiency by reducing power loop size, interconnect parasitics, assembly costs, etc., as well as providing better control over gate signals and lower ringing at higher frequencies.
The article does not appear to be biased or one sided in its reporting, as it provides an objective overview of the development of this new technology without any promotional content or partiality towards any particular point of view. It also does not appear to be missing any points of consideration or evidence for its claims, as it provides detailed information about the components of the platform and how they can help improve efficiency. Additionally, there are no unexplored counterarguments or missing evidence for its claims made in the article.
The only potential issue with this article is that it does not mention any possible risks associated with using this technology, such as safety concerns or environmental impacts that may arise from its use. However, since this is an academic paper discussing a new technology rather than a policy document outlining potential risks associated with its use, this omission is understandable and does not detract from the overall reliability of the article's content.