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Article summary:
1. This article discusses the use of inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) dry etching techniques to fabricate type-II InAs/GaSb superlattice (T2SL) photodetectors for third generation focal plane arrays (FPAs).
2. The results of single element T2SL photodiodes after BCl3/Ar inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) dry etching are compared.
3. High aspect ratio etching is demonstrated on mutli-element arrays with 3μm-wide trenches that are 11μm deep.
Article analysis:
This article provides a detailed overview of the use of inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) dry etching techniques to fabricate type-II InAs/GaSb superlattice (T2SL) photodetectors for third generation focal plane arrays (FPAs). The article is well written and provides a comprehensive overview of the research conducted, including the comparison between the morphological and electrical results of single element T2SL photodiodes after BCl3/Ar inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) dry etching, as well as high aspect ratio etching demonstrated on mutli-element arrays with 3μm-wide trenches that are 11μm deep. The article does not appear to be biased or one-sided in its reporting, as it presents both sides equally. It also does not appear to contain any promotional content or partiality towards either side. Furthermore, all possible risks associated with this research have been noted in the article. Therefore, overall, this article appears to be trustworthy and reliable in its reporting.