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Boosting Charge Transport in BiVO4 Photoanode for Solar Water Oxidation - Lu - 2022 - Advanced Materials - Wiley Online Library
Source: onlinelibrary.wiley.com
Article summary:
1. Vacancy engineering is a major strategy for metal oxide semiconductor photoelectrodes, but has faced a challenge in bulk charge transport due to the elusive charge self-trapping site.
2. A new deep eutectic solvent (Bivac) was used to engineer bismuth vacancies of BiVO4 photoanode, which increased the charge diffusion coefficient by 5.8 times and boosted the charge transport efficiency.
3. By loading CoBi cocatalyst to enhance charge transfer efficiency, the photocurrent density of BiVO4 photoanode with optimal Bivac concentration reached 4.5 mA cm−2 at 1.23 V vs reversible hydrogen electrode under AM 1.5 G illumination, higher than previously reported Ovac engineered BiVO4 photoanode.
Article analysis:
The article is generally reliable and trustworthy as it provides evidence for its claims through experiments and data analysis. The authors have also provided detailed information about their research methods and results, which makes it easier to evaluate the accuracy of their findings. Furthermore, the authors have declared no conflict of interest, which further adds to the credibility of their work. However, there are some potential biases that should be noted in this article such as one-sided reporting and unsupported claims. For example, while the authors discuss how their method can increase charge transport efficiency in BiVO4 photoanodes, they do not explore any potential drawbacks or risks associated with this method such as environmental impacts or safety concerns that may arise from using deep eutectic solvents in this process. Additionally, while they compare their results to those obtained from previously reported Ovac engineered BiVO4 photoanodes, they do not provide any evidence or data to support this comparison or explain why their method is superior to other methods used for engineering bismuth vacancies in these materials.