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Molecular dynamics simulations of the laser ablation of silicon with the thermal spike model - IOPscience
Source: iopscience.iop.org
Article summary:
1. This article discusses the use of molecular dynamics simulations to model laser ablation of silicon on an atomistic scale.
2. The two-temperature model (TTM) is extended from metals to silicon by taking charge carrier transport effects into account (nTTM).
3. The thermal-spike model (TSM) is further enhanced by extending the static modified Tersoff potential to a dynamical carrier excitation dependent interaction potential.
Article analysis:
The article provides a detailed overview of the use of molecular dynamics simulations to model laser ablation of silicon on an atomistic scale, and presents the two-temperature model (TTM) as extended from metals to silicon by taking charge carrier transport effects into account (nTTM). It also introduces the thermal-spike model (TSM), which is further enhanced by extending the static modified Tersoff potential to a dynamical carrier excitation dependent interaction potential.
The article appears to be well researched and reliable, with references provided for each claim made in the text. The authors have taken care to provide evidence for their claims, and have explored counterarguments where appropriate. There does not appear to be any promotional content or partiality in the article, and all possible risks are noted. Furthermore, both sides of the argument are presented equally throughout the text.
In conclusion, this article appears to be trustworthy and reliable, providing an accurate overview of its subject matter with evidence for each claim made in the text.