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Study of TaN-Gated p-GaN E-Mode HEMT | IEEE Journals & Magazine | IEEE Xplore
Source: ieeexplore.ieee.org
Article summary:
1. This article discusses the study of tantalum nitride (TaN) gate-stack on p-GaN-based e-mode high electron mobility transistor (HEMT) on silicon.
2. TaN-gated HEMTs exhibited three orders of lower forward gate leakage than reference devices with Ti/Au gate-stack.
3. TaN is an attractive gate-stack for p-GaN e-mode HEMTs due to its low forward gate leakage and threshold voltage stability.
Article analysis:
This article provides a detailed overview of the study of tantalum nitride (TaN) gate-stack on p-GaN-based e-mode high electron mobility transistor (HEMT). The article is well written and provides a comprehensive overview of the research conducted, including the results obtained from the experiments. The authors provide evidence to support their claims, such as the three orders of lower forward gate leakage compared to reference devices with Ti/Au gate stack, and the estimated Schottky barrier height being 1–1.5 eV higher than that for Ti/Au gate over a temperature range of 50–300 K.
The article does not appear to be biased or one sided in its reporting, as it presents both sides equally and does not make any unsupported claims or omit any points of consideration or evidence for its claims. It also does not contain any promotional content or partiality towards either side, and possible risks are noted throughout the article. In conclusion, this article appears to be trustworthy and reliable in its reporting and presentation of information.