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Article summary:
1. Silicon-based mid-infrared photonics has potential for next-generation ultra-compact spectroscopic systems.
2. Ge1−xSnx alloy on Si substrate can extend the cut-off wavelength of Si photonics to MIR range.
3. The proposed device achieved extended photodetection wavelength, high photocurrent-to-dark current ratio, detectivity, spectral responsivity, and noise equivalent power at 300 K.
Article analysis:
The article is generally reliable and trustworthy as it provides a detailed overview of the theory and simulation of heterojunction p-i-n MIR photodetectors with Ge0.87Sn0.13/Ge0.92Sn0.08 quantum wells for mid-infrared sensing applications. The article is well researched and provides evidence for its claims in terms of various figure-of merits including dark current, photocurrent to dark current ratio, detectivity, spectral responsivity, and noise equivalent power (NEP). Additionally, parasitic capacitance dependent RC and 3dB bandwidth are also studied using a small signal equivalent circuit model which further adds to the reliability of the article.
However, there are some points that could be improved upon in order to make the article more reliable and trustworthy such as exploring counterarguments or presenting both sides equally when discussing potential risks associated with the proposed device or providing more evidence for its claims such as experimental results or data from actual devices fabricated using the proposed technique. Additionally, there is no mention of any promotional content or partiality in the article which could be addressed by providing more balanced views on the topic discussed in the article.