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This article provides a comprehensive exploration of the physicochemical mechanism for negative bias temperature instability (NBTI) in GaN-HEMTs by extracting activation energy of dislocations. The authors propose an innovative strategy that jointly analyzes the apparent electrical instability caused by NBTI and the corresponding internal reactions on molecular-level presentation, which is supported by advanced material characterization techniques such as transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy to confirm the material information and elucidate the origins of the degradation behaviors from elements and bonding perspectives.

The article is generally reliable, with no obvious biases or unsupported claims. All claims are backed up with evidence, such as data from experiments or other sources, which makes it trustworthy. The authors have also explored counterarguments to their claims, providing a balanced view of their research findings. There is no promotional content in this article, nor any partiality towards any particular point of view or opinion. Possible risks associated with their research have been noted throughout, making it clear that further research is needed before any conclusions can be drawn about its implications for real world applications.