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Article summary:

1. This paper presents a wide tunability, low power, high-Q differential active inductor (DAI) using 0.13 μm CMOS technology.

2. The proposed circuit has an excellent tunable quality factor of almost 2600 and a frequency tuning range from 3.19 to 0.784 GHz.

3. The core DAI dissipates between 1.57 and 2.59 mW on a 1 V supply voltage with an input 1 dB compression point of -2.32 dBm and simulated noise at 0.784 GHz of less than 3.48 nV/√Hz.

Article analysis:

The article is generally reliable and trustworthy, as it provides detailed information about the design of the RF Integrated Differential Active Inductor, including its performance parameters such as frequency tuning range, quality factor, power consumption, input 1 dB compression point, and simulated noise level at 0.784 GHz. The article also provides post-layout simulation results to illustrate the effectiveness of the proposed circuit in terms of its inductance tuning range and quality factor achieved at 1.47 GHz, which further supports its reliability and trustworthiness as a source of information on this topic.

However, there are some potential biases that should be noted in this article; for example, the authors do not provide any evidence or counterarguments to support their claims regarding the advantages of using active inductors over spiral inductors in multiband circuits applications or regarding their proposed approach for improving the quality factor of active inductors through loss compensation techniques such as adding negative resistance to minimize resistive losses. Additionally, there is no discussion about possible risks associated with using this type of circuit or any exploration into alternative approaches that could be used instead for achieving similar results in terms of frequency tuning range and quality factor achieved at 1.47 GHz without sacrificing power consumption or introducing additional noise levels into the system design.