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[全图]TaN门控p-GaN E型HEMT|的研究IEEE Journals & Magazine |IEEE Xplore
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Article summary:
1. This article discusses the research on TaN gate stack on p-GaN based e-mode HEMT.
2. TaN gate stack HEMTs show lower forward gate leakage than Ti/Au gate stack reference devices by orders of magnitude.
3. TaN is an attractive gate stack for p-GaN e-mode HEMTs due to its low forward gate leakage and threshold voltage stability.
Article analysis:
The article is well written and provides a comprehensive overview of the research conducted, including results obtained from experiments. The authors provide evidence to support their claims, such as three orders of magnitude lower forward gate leakage compared to reference devices with Ti/Au gate stacks, and estimated Schottky barrier heights higher than Ti/Au gates by 5-50.300 eV in the 1-1 K temperature range.
The article appears to be unbiased and impartial as it presents both sides equally without making any unsubstantiated claims or omitting any points of consideration or evidence. It also does not contain any promotional content or favoritism towards either side, and the entire article notes possible risks. In conclusion, this article appears to be trustworthy and reliable in terms of reporting and providing information.