1. Recent developments in III-V Sb-based low dimensional solids and device design innovations have enhanced their position in the infrared (IR) detector family.
2. Type-II superlattices (T2SLs) have given a new impact on detector design by discovery of barrier detectors, which prevent current flow in the majority carrier band of the detector's absorber but allow unimpeded flow in the minority carrier band.
3. This paper compares the fundamental properties of HgCdTe and T2SLs and their influence on present status of Sb-based IR detectors as competitors to HgCdTe.
The article is generally reliable and trustworthy, providing an overview of recent developments in III-V Sb-based low dimensional solids and device design innovations for infrared (IR) detectors, as well as a comparison between type-II superlattices (T2SLs) and HgCdTe photodiodes. The article is well researched, with references to relevant literature throughout, and provides an unbiased overview of both technologies. However, there are some areas where more information could be provided or explored further. For example, while the article does discuss potential advantages of T2SLs over HgCdTe photodiodes, it does not provide any evidence to support these claims or explore any potential drawbacks or risks associated with using T2SLs instead of HgCdTe photodiodes. Additionally, while the article does discuss future trends such as Hot Detectors, it does not provide any concrete examples or evidence to support this trend or explore any potential challenges associated with this technology. Finally, while the article does discuss manufacturability issues related to focal plane arrays for both technologies, it does not provide any concrete examples or evidence to support its claims about manufacturability issues for either technology. In conclusion, while overall this article is reliable and trustworthy, there are some areas where more information could be provided or explored further in order to make it even more comprehensive and reliable.